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Transistors
2SB1693
Silicon PNP epitaxial planar type
For general amplification Features
* Large collector current IC * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
1 0.40+0.10 -0.05 3
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
2
(0.65)
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -40 -20 -15 - 0.5 -1 200 150 -55 to +150 Unit V V V A A mW C C
1.1+0.2 -0.1
1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: 3D
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage * Symbol VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCE = -2 V, IC = -100 mA VCE = -2 V, IC = -500 mA IC = -100 mA, IB = -10 mA IC = - 0.5 A, IB = -25 mA Transition frequency Collector output capacitance (Common base, input open circuited) VCB = -5 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -40 -20 -15 160 100 -60 -210 170 16 -300 -500 MHz pF mV 560 Typ Max Unit V V V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
0 to 0.1
0.40.2
5
Publication date: September 2003
SJC00292AED
1
2SB1693
PC Ta
240
- 0.4 Ta = 25C IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA 0
IC VCE
- 0.30 VCE = -2 V
IC I B
Collector power dissipation PC (mW)
200
- 0.25
Collector current IC (A)
160
120
- 0.2
80
- 0.1
40
Collector current IC (A)
- 0.3
- 0.20
- 0.15
- 0.10
- 0.05
0
0
40
80
120
160
0
-2
-4
-6
-8
-10
-12
0
0
- 0.2
- 0.4
- 0.6
- 0.8
-1.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
IC VBE
Collector-emitter saturation voltage VCE(sat) (V)
- 0.12 VCE = -2 V Ta = 75C
VCE(sat) IC
-10-1 IC / IB = 10 400 Ta = 75C 25C -25C
hFE IC
Ta = 75C VCE = -2 V
Forward current transfer ratio hFE
- 0.10
Collector current IC (A)
25C 300 -25C 200
- 0.08
25C
-25C
- 0.06
-10-2
- 0.04
100
- 0.02
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
-10-3 -1
-10
-100
0 -1
-10
-100
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
100 f = 1 MHz Ta = 25C
10
1
0
-10
-20
-30
-40
Collector-base voltage VCB (V)
2
SJC00292AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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